..

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: [. .], 1961. - 15 . : .; 27 . - ( - / . .-. .

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, - . . . - . . . - : [. .], 1966. - 23 .; 21 .

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2 . / [. : . . (. .) .]. - . : , 1989-. - 20 . . 1. - . : , 1989. - 219,[1] . : .

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... // . . . . 1959. .37, .4(10). .1166-1168.

V.V.Balashov, V.A.Eltekov. Method for separating the relative motion of two necleons in oscillator potential well // Nuclear Physics. 1960. V. 16. P. 423-431.

.., .., ,,. - - // . . . . . 1961. . 1, . 6. .1089-1096.

.., ... , , , // . 1962. . 13, . 3. .266-269.

.., .., ... - // . 1962. . 13, . 6. .568-571.

.., .., .., .., .., .., .., ... - // . . . . 150, .4. .866-869.

.., .., ... - . // . 1963. .15, .5. .382-386.

.., .., ... - // . 1964. .16, .4. .291-295.

... - - // . 1965. .18, .6. .650-653.

.., .., ... - // . 1965. .19, .2. .196-199.

.., .., .., .., .., .., .., .., .., .., ... "-1" "-2" // . .: , 1965. .394-405.

... - // . . -. .3: , . 1966. .4. .15-19.

.., .., ... , // . 1966. .8, .7. .2173-2181.

.., ... // . . -. .3: , . 1969. .3. .118-119.

V.A.Eltekov, D.S.Karpuzov, Y.V.Martynenko, V.E.Yurasova. Computer studies of B+ ion penetration into Si single crystal // Atomic Collision Phenomena in Solids. North-Holland P.C.: Amsterdam, 1970. P.657-662.

.., ., ... 3- Pb208 // . . -. .3: , . 1971. .12, .1. .102-104.

.., . , ... 3-1 Pb209 // .. -. .3: , . 1972. .13, .1. .128-130.

.., .., .., ... - , // . 1972. .33, .5. .919-920.

.., .., .., ... L,B- // . 1972. .13. .213-215.

.., .., ... L,B- // . 1972. .13. .102-104.

V.A.Eltekov, D.S.Karpuzov, Yu.V.Martynenko, E.A.Rubakha, V.A.Simonov, V.E.Yurasova. Computer studies of boron ion channeling in silicon single crystal // Radiation Effects. 1972. V.13. P.237-242.

.., .., ... // . . -. .3: , . 1973. .14, .2. .201-205.

.., ... // . 1975. .15. .13-14.

.., .., ... // . , , . 1982. .3. .43-49.

V.E.Yurasova, V.A.Eltekov. Models of single crystal sputtering. // Vacuum. 1982. V. 32, No 7. P.399-424.

.A.Eltekov, O.A.Popova, V.E.Yurasova. Calculation of sputtering of sequentially increasing atom blocks // Radiation Effects. 1984. Vol. 83, No 1-2. PP. 39-67.

V.A.Eltekov, V.N.Samoylov, V.E.Yurasova, H.A.Motaweh. Computer calculations of secondary particle emission near Curie point of nickel // Nuclear Instruments and Methods in Physics Research. Ser. B. 1986. Vol. 13, No 1-3. PP. 433-448.

.., .., ... // . . -. 1986. .27, No 2. .87-89.

.., ... // . 1986. No 5. .84-87.

V.N.Samoylov, A.H.Phillips, V.A.Eltekov, V.E.Yurasova. Simulation of ion transmission and sputtering for hcp and fcc cobalt crystals // Nuclear Instruments and Methods in Physics Research. Ser. B. 1987. Vol. 18, No 3. PP. 243-252.

.., .., ., ... // . . -. 1987. . 28, No 6. .65-69.

.., ... // . . -. . , . 1988. . 29, No 1. .102-103.

.., .., ... - // . , . . 1988. . 52, No 7. . 1376-1379. - // . .: , 1988. .147-151.

V.A.Eltekov, V.B.Shikalov. The method for symbolic evaluation of determinants and their realization in the planner-analytic system // Lecture Notes in Computer Science. 1989. No 378. P.216-222.

.., .., .., ... // . . -. .3. , . 1990. . 31, No 2. .33-38.

... . . .: - . -, 1993. -152.

.., ... // . , . . 1993. .57, No 8. . 190-196.

S.S.Elovikov, V.A.Eltekov, N.N.Negrebetskaya, J.V.Sushkova, V.E.Yurasova, I.I.Shkarban, O.I.Buzhinskij, I.V.Opimach. The sputtering of different modifications of boron nitride under ion and electron irradiation // Journal of Nuclear Materials. 1994. V. 212-215. P.1335-1338.

.., .., .., ... (111) // . , , . 1994. No 2. 46-54.

V.A.Eltekov, S.S.Elovikov, J.S.Colligon, N.N.Negrebetskaya, A.A.Promokhov,
V.E.Yurasova. Sputtering of graphite-like BN crystals // Radiation Effects and Defects in Solids. 1995. V. 133. P.107-120.

.., ... // . -. .3: , . 1995. . 36, No 4. . 82-87.

.., .., .., .., ... // . . . . 1996. .60(7). .128-138.

A.Promokhov, V.A.Eltekov, V.E.Yurasova, J.S.Colligon, A.S.Mosunov. Computer calculations of single crystal sputtering by low energy ions // Nucl. Instr. and Methods in Physics Research B. 1996. Vol.115. P.544-548.

V.A.Eltekov, N.N.Negrebetskaya. Calculation of the energy deposition value for the argon ion bombarded silicon on the base of the plural interaction model // Ion Beam Modification of Materials. Elsevier, Amsterdam - ...1996. P.681-685.

V.A.Eltekov, Computer simulation of H2 encaging into carbon nanotube // Recent Advances in the Chemistry and Physics of Fullerenes and Related Materials, The Electrochemical Soc., NJ, USA, 1999, PV99-12, p.580-586.

V.A.Eltekov. Computer simulation of hydrogen and deuterium atoms penetration into thin carbon nanotube // Chemistry and Physics of Fullerenes and Carbon Nanomaterials, The Electrochemical Soc., NJ, USA, 2000, PV2000-12, p.262-271.

.., ... // . , . 2001. No 5. . 33-35.

V.A.Eltekov. Studies of Hydrogen Molecular Flux Encaging into Carbon Nanotube Using Computer Simulation // International Journal of Nanoscience. 2002. Vol. 1, Nos 3-4. P. 327-335

V.A.Eltekov. Checking the Four-Valued Boolean Algebra by the Use PLANNER // Lecture Notes in Computer Science. 2003. Vol. 2657. P. 764-773.

, .
: [. .], 1961. - 15 . : .; 27 . - ( - / . .-. .

, .
, - . . . - . . . - : [. .], 1966. - 23 .; 21 .

, .
2 . / [. : . . (. .) .]. - . : , 1989-. - 20 . . 1. - . : , 1989. - 219,[1] . : .

, .
. . - : [. .], 1972. - 23 .; 22 .

, .
: 2 . / [. : . . (. .) .]. - . : , 1989. - 20 . . 2. - . : , 1989. - 228 . : .

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